Hydrogen atom participation in metastable defect formation at Si-SiO2 interfaces

被引：7
|
作者：
Lucovsky, G
Yang, H
Jing, Z
Whitten, JL
机构：
[1] N CAROLINA STATE UNIV,DEPT CHEM,RALEIGH,NC 27695
[2] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695
[3] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695
来源：
APPLIED SURFACE SCIENCE | 1997年 / 117卷
基金：
美国国家科学基金会;
关键词：
Si-SiO2; interfaces; metastable defects; defect reactions; interface traps; fixed oxide charge;
D O I：
10.1016/S0169-4332(97)80077-3
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
This paper discusses mechanisms for defect metastability with H atom participation at Si-SiO2 interfaces as in field effect transistors. Reaction pathways are associated with differences in defect bonding properties between positively charged (i) Si atoms and (ii) O and N atoms, Defect reaction equations, supported by quantum chemistry calculations. are presented. The metastable defects emphasized here are created by hole trapping followed by H atom attachment.
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页码：192 / 197
页数：6
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