Feasibility study on ultrafast nonlinear optical properties of 1.55-mu m intersubband transition in AlGaN/GaN quantum wells

被引：173
|
作者：
Suzuki, N
Iizuka, N
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 8A期
关键词：
intersubband transition; nonlinear susceptibility; relaxation time; LO phonon; quantum well; GaN;
D O I：
10.1143/JJAP.36.L1006
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The feasibility of the intersubband transition (ISBT) in Al(Ga)N/GaN quantum wells (QWs) as a device mechanism for ultrafast optical switches is theoretically investigated. The 1.55-mu m ISBT is shown to Lie feasible because of its large conduction band discontinuity. The intersubband relaxation time at 1.55-mu m is estimated to be 80 fs, which is about 30 times shorter than that in InGaAs QWs, The third order nonlinear susceptibility is estimated to be 1.6 x 10(-15) ma V-2 for N = 1 x 10(18) cm(-3). These characteristics suggest that the ISBT in nitride QWs is a promising mechanism for multi-terabit/s optical switches.
引用
收藏
页码：L1006 / L1008
页数：3
相关论文
共 50 条
  • [11] AlGaN/GaN intersubband transitions for Tb/s 1.55-μm optical switches
    Suzuki, N
    Iizuka, N
    [J]. PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VI, PTS 1 AND 2, 1998, 3283 : 614 - 621
  • [12] Optical and structural characterization of GaN/AlGaN quantum wells for intersubband device applications
    Driscoll, Kristina
    Liao, Yitao
    Bhattacharyya, Anirban
    Moustakas, Theodore D.
    Paiella, Roberto
    Zhou, Lin
    Smith, David J.
    [J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 10, 2010, 7 (10): : 2394 - 2397
  • [13] Intersubband absorption at λ∼1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers
    Gmachl, C
    Ng, HM
    Chu, SNG
    Cho, AY
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (23) : 3722 - 3724
  • [14] Simulation of interferometer-type ultrafast all-optical gate switches based on intersubband transition in GaN/AlGaN multiple quantum wells
    Suzuki, N
    [J]. IEICE TRANSACTIONS ON ELECTRONICS, 2002, E85C (01) : 174 - 180
  • [15] Optical properties of wurtzite GaN/AlGaN quantum wells
    Suzuki, M
    Uenoyama, T
    Kamiyama, S
    [J]. SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 915 - 918
  • [16] Electron scattering rates in AlGaN/GaN quantum wells for 1.55-μm inter-subband transition
    Suzuki, N
    Iizuka, N
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (4A): : L369 - L371
  • [17] Absorption coefficient of intersubband transition at 1.55 μm in (CdS/ZnSe)/BeTe quantum wells
    Sfina, N.
    Nasrallah, S. Abdi-Ben
    Mnasri, S.
    Said, M.
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (04)
  • [18] Ultrafast intersubband relaxation dynamics at 1.55 μm in GaN/AlN multiple quantum disk nanocolumns
    Tanaka, Kaiichi
    Ikuno, Keita
    Kasai, Yom
    Fukunaga, Kazuya
    Kunugita, Hideyuki
    Ema, Kazuhlro
    Kikuchi, Akihiko
    Kishino, Katsumi
    [J]. JOURNAL OF LUMINESCENCE, 2008, 128 (5-6) : 1084 - 1086
  • [19] Polarization insensitive 1.55-mu m optical amplifier with GaAs delta-strained Ga0.47In0.53As quantum wells
    Seiferth, F
    Johnson, FG
    Merritt, SA
    Fox, S
    Whaley, RD
    Chen, YJ
    Dagenais, M
    Stone, DR
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (10) : 1340 - 1342
  • [20] Ultrafast all optical modulation based on intersubband transition in semiconductor quantum wells
    Asano, T
    Yoshizawa, S
    Noda, S
    Iizuka, N
    Kaneko, K
    Suzuki, N
    Wada, O
    [J]. OPTICAL AND QUANTUM ELECTRONICS, 2001, 33 (7-10) : 963 - 973
12345