Optical and structural characterization of GaN/AlGaN quantum wells for intersubband device applications

被引：4
|
作者：
Driscoll, Kristina [1 ]
Liao, Yitao [1 ]
Bhattacharyya, Anirban [1 ]
Moustakas, Theodore D. [1 ]
Paiella, Roberto [1 ]
Zhou, Lin [2 ]
Smith, David J. [2 ]
机构：
[1] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA
[2] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 10 | 2010年 / 7卷 / 10期
关键词：
GaN/AlGaN; quantum wells; MBE; structure; optical properties; devices; MU-M; WAVELENGTH; HETEROSTRUCTURES; PARAMETERS; ABSORPTION; TRANSITION;
D O I：
10.1002/pssc.200983905
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Due to their large conduction-band offsets of up to 1.75 eV, GaN/Al(Ga)N quantum wells can support intersubband transitions at record short wavelengths, well into the low-loss transmission window of optical fibers. As a result, these quantum structures are promising to enable new intersubband device applications, including all-optical switching for ultra-broadband fiber-optic networks and emission of short-wave infrared radiation. Here we report our work on the development of high-quality GaN/Al(Ga)N quantum well structures designed for such applications. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：2394 / 2397
页数：4
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