Optical and structural characterization of GaN/AlGaN quantum wells for intersubband device applications

被引：4

作者：

Driscoll, Kristina ^{[1
]}

Liao, Yitao ^{[1
]}

Bhattacharyya, Anirban ^{[1
]}

Moustakas, Theodore D. ^{[1
]}

Paiella, Roberto ^{[1
]}

Zhou, Lin ^{[2
]}

Smith, David J. ^{[2
]}

机构：

[1] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA

[2] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 10 | 2010年 / 7卷 / 10期

关键词：

GaN/AlGaN; quantum wells; MBE; structure; optical properties; devices; MU-M; WAVELENGTH; HETEROSTRUCTURES; PARAMETERS; ABSORPTION; TRANSITION;

D O I：

10.1002/pssc.200983905

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Due to their large conduction-band offsets of up to 1.75 eV, GaN/Al(Ga)N quantum wells can support intersubband transitions at record short wavelengths, well into the low-loss transmission window of optical fibers. As a result, these quantum structures are promising to enable new intersubband device applications, including all-optical switching for ultra-broadband fiber-optic networks and emission of short-wave infrared radiation. Here we report our work on the development of high-quality GaN/Al(Ga)N quantum well structures designed for such applications. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2394 / 2397

页数：4

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