Feasibility study on ultrafast nonlinear optical properties of 1.55-mu m intersubband transition in AlGaN/GaN quantum wells

被引：173
|
作者：
Suzuki, N
Iizuka, N
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 8A期
关键词：
intersubband transition; nonlinear susceptibility; relaxation time; LO phonon; quantum well; GaN;
D O I：
10.1143/JJAP.36.L1006
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The feasibility of the intersubband transition (ISBT) in Al(Ga)N/GaN quantum wells (QWs) as a device mechanism for ultrafast optical switches is theoretically investigated. The 1.55-mu m ISBT is shown to Lie feasible because of its large conduction band discontinuity. The intersubband relaxation time at 1.55-mu m is estimated to be 80 fs, which is about 30 times shorter than that in InGaAs QWs, The third order nonlinear susceptibility is estimated to be 1.6 x 10(-15) ma V-2 for N = 1 x 10(18) cm(-3). These characteristics suggest that the ISBT in nitride QWs is a promising mechanism for multi-terabit/s optical switches.
引用
收藏
页码：L1006 / L1008
页数：3
相关论文
共 50 条
  • [1] Ultrafast intersubband relaxation and nonlinear susceptibility at 1.55 μm in GaN/AlN multiple-quantum wells
    Hamazaki, J
    Matsui, S
    Kunugita, H
    Ema, K
    Kanazawa, H
    Tachibana, T
    Kikuchi, A
    Kishino, K
    [J]. APPLIED PHYSICS LETTERS, 2004, 84 (07) : 1102 - 1104
  • [2] Intersubband transition in AlGaN/GaN quantum wells for ultrafast all-optical switching at communication wavelength
    Suzuki, N
    Iizuka, N
    Kaneko, K
    [J]. ULTRAFAST PHENOMENA IN SEMICONDUCTORS IV, 2000, 3940 : 127 - 138
  • [3] Ultrafast intersubband transitions in GaN/AlGaN heterostructures at ≈1.55-μm wavelength
    Heber, JD
    Gmachl, CF
    Ng, HM
    Cho, AY
    [J]. ULTRAFAST PHENOMENA IN SEMICONDUCTORS AND NANOSTRUCTURE MATERIALS VIII, 2004, 5352 : 134 - 143
  • [4] FDTD simulation of femtosecond optical gating in nonlinear optical waveguide utilizing intersubband transition in AlGaN/GaN quantum wells
    Suzuki, N
    Iizuka, N
    Kaneko, K
    [J]. IEICE TRANSACTIONS ON ELECTRONICS, 2000, E83C (06): : 981 - 988
  • [5] Ultrafast intersubband relaxation (≤150 fs) in AlGaN/GaN multiple quantum wells
    Iizuka, N
    Kaneko, K
    Suzuki, N
    Asano, T
    Noda, S
    Wada, O
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (05) : 648 - 650
  • [6] Comparative study of ultrafast intersubband electron scattering times at ∼1.55 μm wavelength in GaN/AlGaN heterostructures
    Heber, JD
    Gmachl, C
    Ng, HM
    Cho, AY
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (07) : 1237 - 1239
  • [7] Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells
    Chen, G.
    Li, Z. L.
    Wang, X. Q.
    Huang, C. C.
    Rong, X.
    Sang, L. W.
    Xu, F. J.
    Tang, N.
    Qin, Z. X.
    Sumiya, M.
    Chen, Y. H.
    Ge, W. K.
    Shen, B.
    [J]. APPLIED PHYSICS LETTERS, 2013, 102 (19)
  • [8] Effect of polarization field on intersubband transition in AlGaN/GaN quantum wells
    Suzuki, N
    Iizuka, N
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1999, 38 (4A): : L363 - L365
  • [9] Measurement of optical nonlinearities from intersubband transitions in GaN/AlGaN quantum wells at 1.5 μm
    Chen, G
    Rapaport, R
    Mitrofanov, O
    Gmachl, C
    Ng, HM
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2003, 240 (02): : 384 - 387
  • [10] Sub-picosecond electron scattering time for λ ≃ 1.55μm intersubband transitions in GaN/AlGaN multiple quantum wells
    Gmachl, C
    Frolov, SV
    Ng, HM
    Chu, SNG
    Cho, AY
    [J]. ELECTRONICS LETTERS, 2001, 37 (06) : 378 - 380
12345