Effect of polarization field on intersubband transition in AlGaN/GaN quantum wells

被引：101
|
作者：
Suzuki, N [1 ]
Iizuka, N [1 ]
机构：
[1] Toshiba Co Ltd, Ctr Res & Dev, Adv Semicond Devices Res Labs, Saiwai Ku, Kawasaki, Kanagawa 2108582, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1999年 / 38卷 / 4A期
关键词：
intersubband transition; piezoelectric effect; spontaneous polarization; relaxation time; quantum well; GaN; AlN; optical switches;
D O I：
10.1143/JJAP.38.L363
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of the built-in field caused by the piezoelectric effect and the spontaneous polarization inherent in nitride quantum wells on the intersubband transition (ISBT) is studied. Measured intersubband absorption wavelengths of Al0.65Ga0.35N/GaN multiquantum wells suggest the existence of a strong field of about 2 MV/cm. For thick wells, the built-in field in the well reduces the effective well width, which drastically shortens the ISBT wavelength and increases the intersubband relaxation time. For thin wells, the strong field in barriers reduces the effective barrier height, which affects the formation of the second subband. Reduction in the field strength in the barriers is important in achieving a short wavelength ISBT.
引用
收藏
页码：L363 / L365
页数：3
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