THz intersubband transitions in AlGaN/GaN multi-quantum-wells

被引：9
|
作者：
Beeler, Mark [1 ]
Bougerol, Catherine [2 ]
Bellet-Amalaric, Edith [1 ]
Monroy, Eva [1 ]
机构：
[1] CEA Grenoble, INAC SP2M, CEA CNRS Grp Nanophys & Semicond, F-38054 Grenoble 9, France
[2] Inst Neel CNRS, CEA CNRS Grp Nanophys & Semicond, F-38042 Grenoble 9, France
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2014年 / 211卷 / 04期
关键词：
GaN; intersubband; quantum well; terahertz;
D O I：
10.1002/pssa.201300431
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Various designs of AlGaN/GaN structures displaying intersubband absorption in the THz spectral range are reported upon. Firstly, samples with 3-layer quantum wells (step-quantum-wells) displaying far-infrared intersubband absorption are presented. Theoretical analysis of the reproducibility issues associated to this architecture is done, and a more robust design based on 4-layer quantum wells is proposed. Such a structure has been fabricated by plasma-assisted molecular-beam epitaxy using two Al effusion cells to produce three AlGaN concentrations, without growth interruptions. Samples have been structurally validated by transmission electron microscopy and X-ray diffraction. Fourier transform infrared spectroscopy measurements show far-infrared absorption of TM-polarized light, which gets broader and deeper for increasing doping levels.
引用
收藏
页码：761 / 764
页数：4
相关论文
共 50 条
  • [1] Electronic Raman scattering from intersubband transitions in GaN/AlGaN quantum wells
    Halsall, MP
    Sherliker, B
    Harrison, P
    Jovanovic, VD
    Indjin, D
    Ikonic, Z
    Wang, T
    Whitehead, MA
    Parbrook, PJ
    [J]. 5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07): : 2662 - 2665
  • [2] Recent results in quantum cascade lasers and intersubband transitions in GaN/AlGaN multiple quantum wells
    Gmachl, C
    Ng, HM
    Paiella, R
    Martini, R
    Hwang, HY
    Sivco, DL
    Capasso, F
    Cho, AY
    Frolov, SV
    Chu, SNG
    Liu, HC
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4): : 823 - 828
  • [3] Effect of strain relaxation and screening on intersubband transitions in GaN/AlGaN multiple quantum wells
    Hoshino, K
    Someya, T
    Hirakawa, K
    Arakawa, Y
    [J]. PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 : 125 - 128
  • [4] INTERSUBBAND ABSORPTION BY PHOTOINDUCED EXCITONS IN UNDOPED MULTI-QUANTUM-WELLS
    OLSZAKIER, M
    EHRENFREUND, E
    COHEN, E
    BAJAJ, J
    SULLIVAN, GJ
    [J]. SURFACE SCIENCE, 1990, 228 (1-3) : 123 - 126
  • [5] Intersubband transitions in quantum wells as sources of Thz radiation
    Camacho, AS
    Gutiérrez, RM
    Ardila, G
    [J]. MICROELECTRONICS JOURNAL, 2005, 36 (10) : 922 - 927
  • [6] PHOTOINDUCED INTERSUBBAND ABSORPTION IN BARRIER DOPED MULTI-QUANTUM-WELLS
    GARINI, Y
    OLSZAKIER, M
    COHEN, E
    EHRENFREUND, E
    RON, A
    LAW, KK
    MERZ, JL
    GOSSARD, AC
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 1990, 7 (04) : 287 - 290
  • [7] Low-pressure MOCVD growth of GaN/AlGaN multiple quantum wells for intersubband transitions
    Hoshino, K
    Someya, T
    Hirakawa, K
    Arakawa, Y
    [J]. JOURNAL OF CRYSTAL GROWTH, 2002, 237 : 1163 - 1166
  • [8] Electroabsorption modulator using intersubband transitions in GaN-AlGaN-AlN step quantum wells
    Holmstroem, Petter
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 2006, 42 (7-8) : 810 - 819
  • [9] Measurement of optical nonlinearities from intersubband transitions in GaN/AlGaN quantum wells at 1.5 μm
    Chen, G
    Rapaport, R
    Mitrofanov, O
    Gmachl, C
    Ng, HM
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2003, 240 (02): : 384 - 387
  • [10] Intersubband absorption in AlN/GaN/AlGaN coupled quantum wells
    Driscoll, Kristina
    Bhattacharyya, Anirban
    Moustakas, Theodore D.
    Paiella, Roberto
    Zhou, Lin
    Smith, David J.
    [J]. APPLIED PHYSICS LETTERS, 2007, 91 (14)
12345