Feasibility study on ultrafast nonlinear optical properties of 1.55-mu m intersubband transition in AlGaN/GaN quantum wells

被引：173
|
作者：
Suzuki, N
Iizuka, N
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 8A期
关键词：
intersubband transition; nonlinear susceptibility; relaxation time; LO phonon; quantum well; GaN;
D O I：
10.1143/JJAP.36.L1006
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The feasibility of the intersubband transition (ISBT) in Al(Ga)N/GaN quantum wells (QWs) as a device mechanism for ultrafast optical switches is theoretically investigated. The 1.55-mu m ISBT is shown to Lie feasible because of its large conduction band discontinuity. The intersubband relaxation time at 1.55-mu m is estimated to be 80 fs, which is about 30 times shorter than that in InGaAs QWs, The third order nonlinear susceptibility is estimated to be 1.6 x 10(-15) ma V-2 for N = 1 x 10(18) cm(-3). These characteristics suggest that the ISBT in nitride QWs is a promising mechanism for multi-terabit/s optical switches.
引用
收藏
页码：L1006 / L1008
页数：3
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