CSTBT™ based Split-Gate RC-IGBT with Low Loss and EMI Noise

被引：0

作者：

Nishi, Koichi ^{[1
]}

Narazaki, Atsushi ^{[1
]}

机构：

[1] Mitsubishi Electr Corp, Power Device Works, Nishi Ku, 1-1-1 Imajyuku Higashi, Fukuoka 8190192, Japan

来源：

PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020) | 2020年

关键词：

RC-IGBT; CSTBT; Split-gate; Miller capacitance; Switching loss; EMI noise;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

CSTBT (TM) faces a complex tradeoff among E-on/off-V-CEsat-SOA and EMI noise. We propose a split-gate CSTBT (TM) to break up the complex tradeoff and introduce this novel structure to the RC-IGBT for the first time. The Miller capacitance was drastically reduced by using the proposed structure while maintaining the Blocking Voltage, which contributes to approximately a 15% reduction in total loss without any sacrifices of EMI noise and/or SOA.

引用

页码：138 / 141

页数：4

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