CSTBT™ based Split-Gate RC-IGBT with Low Loss and EMI Noise

被引：0

作者：

Nishi, Koichi ^{[1
]}

Narazaki, Atsushi ^{[1
]}

机构：

[1] Mitsubishi Electr Corp, Power Device Works, Nishi Ku, 1-1-1 Imajyuku Higashi, Fukuoka 8190192, Japan

来源：

PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020) | 2020年

关键词：

RC-IGBT; CSTBT; Split-gate; Miller capacitance; Switching loss; EMI noise;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

CSTBT (TM) faces a complex tradeoff among E-on/off-V-CEsat-SOA and EMI noise. We propose a split-gate CSTBT (TM) to break up the complex tradeoff and introduce this novel structure to the RC-IGBT for the first time. The Miller capacitance was drastically reduced by using the proposed structure while maintaining the Blocking Voltage, which contributes to approximately a 15% reduction in total loss without any sacrifices of EMI noise and/or SOA.

引用

页码：138 / 141

页数：4

共 50 条

[31] Ultra Low Miller Capacitance Trench-Gate IGBT with the Split Gate Structure
Ohi, K.
Ikura, Y.
Yoshimoto, A.
Sugimura, K.
Onozawa, Y.
Takahashi, H.
Otsuki, M.
2015 IEEE 27TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD), 2015, : 25 - 28
[32] Heterojunction Diode Shielded SiC Split-Gate Trench MOSFET With Optimized Revere Recovery Characteristic and Low Switching Loss
An, Junjie
Hu, Shengdong
IEEE ACCESS, 2019, 7 : 28592 - 28596
[33] A Snapback Suppressed RC-IGBT With N-Si/n-Ge Heterojunction at Low Temperature
Zhang, Xiao-Dong
Wang, Ying
Bao, Meng-Tian
Li, Xing-Ji
Yang, Jian-Qun
Cao, Fei
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (10) : 5062 - 5067
[34] Low Loss and Low EMI Noise Trench IGBT with Shallow Emitter Trench Controlled p-Type Dummy Region
Zhang, Jinping
Li, Xiaofeng
Zhu, Rongrong
Wang, Kang
Zhang, Bo
CHINESE JOURNAL OF ELECTRONICS, 2024, 33 (02) : 326 - 335
[35] Low Loss and Low EMI Noise Trench IGBT with Shallow Emitter Trench Controlled P-Type Dummy Region
Jinping ZHANG
Xiaofeng LI
Rongrong ZHU
Kang WANG
Bo ZHANG
Chinese Journal of Electronics, 2024, 33 (02) : 326 - 335
[36] Fabrication and Shot Noise Characteristics of Ultra-Small Split-Gate GaAs Quantum Dots
Kim, Youngsang
Seo, Yohan
Jeon, Hankyung
Jeong, Heejun
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2009, 54 (04) : 1594 - 1598
[37] Silicon Carbide Split-Gate MOSFET with Merged Schottky Barrier Diode and Reduced Switching Loss
Jiang, Huaping
Wei, Jin
Dai, Xiaoping
Ke, Maolong
Zheng, Changwei
Deviny, Ian
2016 28TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2016, : 59 - 62
[38] Optimized Trench IGBT With Dummy Gate and Buried n-Type CS Layer for Substantial Reduction of Power Loss and EMI Noise
Zhang, Jinping
Liu, Yazheng
Deng, Haonan
Wang, Kang
Zhang, Bo
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (11) : 6880 - 6888
[39] A Novel Split-Gate Structure for 85V Application with Low Output Capacitance
Tian, Ye
Yang, Zhuo
Zhou, Jincheng
Bian, Fangjuan
Tong, Xin
Zhu, Jing
Sun, Weifeng
Shi, Longxing
Zhu, Yuanzheng
Ye, Peng
2016 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2016, : 112 - 115
[40] A mixer architecture using GaN-based split-gate nanowire transistor
Jha, Jaya
Surapaneni, Sreenadh
Ganguly, Swaroop
Saha, Dipankar
NANOTECHNOLOGY, 2024, 35 (41)

← 1 2 3 4 5 →