Development of the next generation 1200V trench-gate FS-IGBT featuring lower EMI noise and lower switching loss

被引：39

作者：

Onozawa, Y. ^{[1
]}

Nakano, H. ^{[1
]}

Otsuki, M. ^{[1
]}

Yoshikawa, K. ^{[2
]}

Miyasaka, T. ^{[1
]}

Seki, Y. ^{[3
]}

机构：

[1] Fuji Elect Device Technol Co Ltd, 4-18-1 Tsukama, Matsumoto, Nagano 3900821, Japan

[2] Fuji Elect Adv Technol Co Ltd, Ichihara, Chiba, Japan

[3] Fuji Elect Holdings Co Ltd, Tokyo, Japan

来源：

PROCEEDINGS OF THE 19TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS | 2007年

关键词：

floating P-base layer; EMI noise; turn-on di/dt controllability; turn-off oscillation; FWD reverse recovery dv/dt;

D O I：

10.1109/ISPSD.2007.4294920

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes the next generation 1200V trench-gate FS-IGBT chip technologies based on the concepts of the "low noise" and "low power dissipation". The novel design of the IGBT surface structure has been able to realize 36% reduction of the turn-on power dissipation when compared to the conventional IGBTs under the operating condition to set the same FWD reverse recovery dv/dt. Furthermore, the trade-off relationship between the on-state voltage and the turn-off power dissipation has been improved about 20% without the turn-off oscillation even in the extreme condition.

引用

页码：13 / +

页数：2

共 7 条

[1] Development of the next generation 1700V trench-gate FS-IGBT
Onozawa, Y.
Ozaki, D.
Nakano, H.
Yamazaki, T.
Fujishima, N.
2011 IEEE 23RD INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2011, : 52 - 55
[2] 600V trench-gate FS-IGBT with micro-P structure
Nakano H.
Onozawa Y.
Kawano R.
Yamazaki T.
Seki Y.
IEEJ Transactions on Electronics, Information and Systems, 2010, 130 (06) : 951 - 954+7
[3] Novel Low Turn-Off Loss Trench-Gate FS-IGBT With a Hybrid p+/n Collector Structure
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Zhang, Weijia
Ng, Wai Tung
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2019, 7 (01) : 677 - 681
[4] Complete Avalanche Process and Failure Mechanism of Trench-Gate FS-IGBT Under Unclamped Inductive Switching by Using Infrared Visualization Method
Tong, Xin
Liu, Siyang
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IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (09) : 3908 - 3911
[5] The Next Generation 1200V Trench Clustered IGBT Technology With Improved Trade-off Relationship
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2015 THIRTIETH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2015), 2015, : 1266 - 1269
[6] New generation 1200V power module with trench gate IGBT and super soft recovery diode and its evaluations
Iwamoto, H
Kawakami, A
Satoh, K
Takahashi, H
Nakaoka, M
IEE PROCEEDINGS-ELECTRIC POWER APPLICATIONS, 2000, 147 (03): : 153 - 158
[7] Experimental Demonstration of the Active Trench Layout Tuned 1200V CSTBT™ for Lower dV/dt Surge and Turn-on Switching Loss
Konishi, Kazuva
Kamibaba, Ryu
Umeyama, Mariko
Narazaki, Atsushi
Takahashi, Tetsuo
Furukawa, Akihiko
Tarutani, Masayoshi
2016 28TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2016, : 363 - 366

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