Surface chemistry of the growth and doping of InGaAs by metalorganic chemical vapor deposition.

被引：0
|
作者：
Hicks, RF [1 ]
Li, L [1 ]
Kappers, M [1 ]
Qi, H [1 ]
Gan, S [1 ]
Han, B [1 ]
机构：
[1] UNIV CALIF LOS ANGELES,DEPT CHEM ENGN,LOS ANGELES,CA 90095
来源：
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY | 1997年 / 214卷
关键词：
D O I：
暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：71 / COLL
页数：2
相关论文
共 50 条
  • [1] EPITAXIAL GROWTH OF CuGaS2 BY METALORGANIC CHEMICAL VAPOR DEPOSITION.
    Hara, Kazuhiko
    Kojima, Tohru
    Kukimoto, Hiroshi
    Japanese Journal of Applied Physics, Part 2: Letters, 1987, 26 (07):
  • [2] GROWTH OF ULTRA-THIN LAYER SUPERLATTICES BY METALORGANIC CHEMICAL VAPOR DEPOSITION.
    Costrini, G.
    Emanuel, M.A.
    Givens, M.E.
    Coleman, J.J.
    Jeng, S.J.
    Wayman, C.M.
    Superlattices and Microstructures, 1985, 2 (01) : 27 - 31
  • [3] GROWTH OF POLYCRYSTALLINE CdS FILMS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR DEPOSITION.
    Yamaga, Shigeki
    Yoshikawa, Akihiko
    Kasai, Haruo
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1987, 26 (07): : 1002 - 1007
  • [4] GROWTH AND CHARACTERIZATION OF GaAs LAYERS GROWN ON Ge/Si SUBSTRATES BY METALORGANIC CHEMICAL VAPOR DEPOSITION.
    Fukuda, Yukio
    Kadota, Yoshiaki
    Ohmachi, Yoshiro
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1988, 27 (04): : 485 - 488
  • [5] GROWTH OF HFC WHISKERS BY CHEMICAL VAPOR DEPOSITION.
    YUITOU, ISAMU
    FUTAMOTO, MASAAKI
    KAWABE, USHIO
    1982, V 46 (N 8): : 737 - 742
  • [6] Magnesium doping of GaN by metalorganic chemical vapor deposition
    Lu, HQ
    Bhat, I
    GALLIUM NITRIDE AND RELATED MATERIALS, 1996, 395 : 497 - 502
  • [7] Growth of gallium antimonide (GaSb) by metalorganic chemical vapour deposition.
    Subekti, A
    Goldys, EM
    Tansley, TL
    1996 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES, PROCEEDINGS, 1996, : 426 - 429
  • [8] The growth of AlInSb by metalorganic chemical vapor deposition
    R. M. Biefeld
    A. A. Allerman
    K. C. Baucom
    Journal of Electronic Materials, 1998, 27 : L43 - L46
  • [9] The growth of AlInSb by metalorganic chemical vapor deposition
    Biefeld, RM
    Allerman, AA
    Baucom, KC
    JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (06) : L43 - L46
  • [10] EFFECT OF GROWTH TEMPERATURE ON THE PHOTOLUMINESCENT SPECTRA OF UNDOPED AlGaAs GROWN BY METALORGANIC-CHEMICAL VAPOR DEPOSITION.
    Mohammed, Khalid
    Merz, James L.
    Kasemset, Dumrong
    Materials Letters, 1983, 2 (01) : 35 - 38
12345