EFFECT OF GROWTH TEMPERATURE ON THE PHOTOLUMINESCENT SPECTRA OF UNDOPED AlGaAs GROWN BY METALORGANIC-CHEMICAL VAPOR DEPOSITION.

被引：4
|
作者：
Mohammed, Khalid [1 ]
Merz, James L. [1 ]
Kasemset, Dumrong [1 ]
机构：
[1] Univ of California, Santa Barbara,, Dep of Electrical & Computer, Engineering, Santa Barbara, CA, USA, Univ of California, Santa Barbara, Dep of Electrical & Computer Engineering, Santa Barbara, CA,
来源：
Materials Letters | 1983年 / 2卷 / 01期
关键词：
ORGANOMETALLICS - Decomposition - PHOTOLUMINESCENCE - SEMICONDUCTING ALUMINUM COMPOUNDS - Growth - SEMICONDUCTOR MATERIALS - Spectroscopic Analysis;
D O I：
10.1016/0167-577X(83)90027-7
中图分类号：
学科分类号：
摘要：
The epitaxial growth of GaAs and AlGaAs by metalorganic-chemical vapor deposition (MO-CVD) has been widely used for the fabrication of a variety of devices. A detailed investigation of the effect of substrate growth temperature on the optical properties of AlGaAs grown by metalorganic-chemical vapor deposition is reported, using room- and low-temperature photoluminescence. A monotonic increase in band-to-band photoluminescence is observed as the growth temperature is increased from 700 to 800 degree C. At the same time, however, an increase in the incorporation of C and Ge acceptors is observed.
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页码：35 / 38
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