Magnesium doping of GaN by metalorganic chemical vapor deposition

被引：0
|
作者：
Lu, HQ [1 ]
Bhat, I [1 ]
机构：
[1] RENSSELAER POLYTECH INST,DEPT ELECT COMP & SYST ENGN,TROY,NY 12180
来源：
GALLIUM NITRIDE AND RELATED MATERIALS | 1996年 / 395卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：497 / 502
页数：6
相关论文
共 50 条
  • [1] Delta-doping of Si in GaN by metalorganic chemical vapor deposition
    Kim, JH
    Yang, GM
    Choi, SC
    Choi, JY
    Cho, HK
    Lim, KY
    Lee, HJ
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (2A): : 681 - 682
  • [2] Magnesium doping profile control in p-GaN layers grown by metalorganic chemical vapor deposition
    Bakhtiary-Noodeh M.
    Detchprohm T.
    Dupuis R.D.
    Journal of Crystal Growth, 2023, 602
  • [3] MAGNESIUM DOPING OF (AL,GA)AS IN METALORGANIC CHEMICAL VAPOR-DEPOSITION
    TAMAMURA, K
    OHHATA, T
    KAWAI, H
    KOJIMA, C
    JOURNAL OF APPLIED PHYSICS, 1986, 59 (10) : 3549 - 3554
  • [4] Oxygen doping of c-plane GaN by metalorganic chemical vapor deposition
    Heikman, S
    Keller, S
    DenBaars, SP
    Mishra, UK
    5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07): : 2557 - 2561
  • [5] Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications
    Young, N. G.
    Farrell, R. M.
    Iza, M.
    Nakamura, S.
    DenBaars, S. P.
    Weisbuch, C.
    Speck, J. S.
    JOURNAL OF CRYSTAL GROWTH, 2016, 455 : 105 - 110
  • [6] Effect of Al doping in GaN films grown by metalorganic chemical vapor deposition
    Lee, JH
    Hahm, SH
    Lee, JH
    Bae, SB
    Lee, KS
    Cho, YH
    Lee, JL
    APPLIED PHYSICS LETTERS, 2003, 83 (05) : 917 - 919
  • [7] NEW MAGNESIUM DOPING SOURCE FOR METALORGANIC CHEMICAL VAPOR-DEPOSITION - OCTAMETHYLDIALUMINUMMONOMAGNESIUM
    HATANO, A
    IZUMIYA, T
    OHBA, Y
    APPLIED PHYSICS LETTERS, 1991, 58 (14) : 1488 - 1490
  • [8] Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition
    Appl Phys Lett, 5 (641):
  • [9] Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition
    Shu, CK
    Ou, J
    Lin, HC
    Chen, WK
    Lee, MC
    APPLIED PHYSICS LETTERS, 1998, 73 (05) : 641 - 643
  • [10] MAGNESIUM DOPING USING AN ADDUCT OF TRIMETHYLALUMINUM AND DIMETHYLMAGNESIUM IN METALORGANIC CHEMICAL VAPOR-DEPOSITION
    HATANO, A
    IZUMIYA, T
    OHBA, Y
    JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) : 455 - 459
12345