Magnesium doping of GaN by metalorganic chemical vapor deposition

被引：0
|
作者：
Lu, HQ [1 ]
Bhat, I [1 ]
机构：
[1] RENSSELAER POLYTECH INST,DEPT ELECT COMP & SYST ENGN,TROY,NY 12180
来源：
GALLIUM NITRIDE AND RELATED MATERIALS | 1996年 / 395卷
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：497 / 502
页数：6
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