Surface chemistry of the growth and doping of InGaAs by metalorganic chemical vapor deposition.

被引：0
|
作者：
Hicks, RF [1 ]
Li, L [1 ]
Kappers, M [1 ]
Qi, H [1 ]
Gan, S [1 ]
Han, B [1 ]
机构：
[1] UNIV CALIF LOS ANGELES,DEPT CHEM ENGN,LOS ANGELES,CA 90095
来源：
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY | 1997年 / 214卷
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D O I：
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中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
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页码：71 / COLL
页数：2
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