Titanium single-electron transistor fabricated by electron-beam lithography

被引：5
|
作者：
Sillanpää, MA [1 ]
Hakonen, PJ [1 ]
机构：
[1] Helsinki Univ Technol, Low Temp Lab, FIN-02015 Espoo, Finland
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 15卷 / 01期
关键词：
single-electron transistors; Coulomb blockade; tunneling;
D O I：
10.1016/S1386-9477(01)00491-X
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A method to fabricate non-superconducting mesoscopic tunnel junctions by oxidation of Ti is presented. The fabrication process uses conventional electron-beam lithography and shadow deposition through an organic resist mask. Superconductivity in Ti is suppressed by performing the deposition under a suitable background pressure. We demonstrate the method by making a single-electron transistor which operated at T < 0.4 K and had a moderate charge noise of 2.5 x 10(-3) e/rootHz at 10 Hz. Based on non-linearities in the current-voltage characteristics at higher voltages, we deduce the oxide barrier height of approximately 110 mV. The non-superconducting Ti junctions can be useful in several applications. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：41 / 47
页数：7
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