Titanium single-electron transistor fabricated by electron-beam lithography

被引：5

作者：

Sillanpää, MA ^{[1
]}

Hakonen, PJ ^{[1
]}

机构：

[1] Helsinki Univ Technol, Low Temp Lab, FIN-02015 Espoo, Finland

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 15卷 / 01期

关键词：

single-electron transistors; Coulomb blockade; tunneling;

D O I：

10.1016/S1386-9477(01)00491-X

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A method to fabricate non-superconducting mesoscopic tunnel junctions by oxidation of Ti is presented. The fabrication process uses conventional electron-beam lithography and shadow deposition through an organic resist mask. Superconductivity in Ti is suppressed by performing the deposition under a suitable background pressure. We demonstrate the method by making a single-electron transistor which operated at T < 0.4 K and had a moderate charge noise of 2.5 x 10(-3) e/rootHz at 10 Hz. Based on non-linearities in the current-voltage characteristics at higher voltages, we deduce the oxide barrier height of approximately 110 mV. The non-superconducting Ti junctions can be useful in several applications. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：41 / 47

页数：7

共 50 条

[21] ELECTRON-BEAM LITHOGRAPHY
PEASE, RFW
CONTEMPORARY PHYSICS, 1981, 22 (03) : 265 - 290
[22] ELECTRON-BEAM LITHOGRAPHY
HERRIOTT, DR
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) : C102 - C102
[23] Electron-beam lithography
Harriott, L
Liddle, A
PHYSICS WORLD, 1997, 10 (04) : 41 - 45
[24] Single-electron transistor backaction on the single-electron box
Turek, BA
Lehnert, KW
Clerk, A
Gunnarsson, D
Bladh, K
Delsing, P
Schoelkopf, RJ
PHYSICAL REVIEW B, 2005, 71 (19):
[25] THE SINGLE-ELECTRON TRANSISTOR
KASTNER, MA
REVIEWS OF MODERN PHYSICS, 1992, 64 (03) : 849 - 858
[26] A SINGLE-ELECTRON TRANSISTOR
不详
IEEE SPECTRUM, 1991, 28 (02) : 19 - 19
[27] Single-Electron Transistor Operation of a Physically Defined Silicon Quantum Dot Device Fabricated by Electron Beam Lithography Employing a Negative-Tone Resist
Nishiyama, Shimpei
Kato, Kimihiko
Liu, Yongxun
Mizokuchi, Raisei
Yoneda, Jun
Kodera, Tetsuo
Mori, Takahiro
IEICE TRANSACTIONS ON ELECTRONICS, 2023, E106C (10) : 592 - 596
[28] ELECTRON-BEAM INSTRUMENTS AND ELECTRON LITHOGRAPHY
VASICHEV, BN
SOVIET JOURNAL OF OPTICAL TECHNOLOGY, 1982, 49 (12): : 778 - 785
[29] Self-aligned double-gate single-electron transistor derived from 0.12-μm-scale electron-beam lithography
Nishiguchi, K
Oda, S
APPLIED PHYSICS LETTERS, 2001, 78 (14) : 2070 - 2072
[30] Process study of ZEP520 positive electron-beam resist and its application in single-electron transistor
Long, SB
Li, ZG
Zhao, XW
Chen, BQ
Liu, M
Advanced Microlithography Technologies, 2005, 5645 : 255 - 266

← 1 2 3 4 5 →