Photoluminescence and electrical properties of N-implanted ZnO films

被引：12
|
作者：
Zhang, X. D. [1 ]
Liu, C. L. [1 ]
Wang, Z. [1 ]
Lu, Y. Y. [1 ]
Yin, L. J. [1 ]
机构：
[1] Tianjin Univ, Sch Sci, Dept Phys, Tianjin 300072, Peoples R China
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2007年 / 254卷 / 01期
关键词：
ZnO; ion implantation; photoluminescence; doping level;
D O I：
10.1016/j.nimb.2006.10.074
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
ZnO thin films deposited on glass substrate were implanted by 140 keV N ions at a dose of 2 x 10(16)/cm(2) and were then annealed in vacuum for 1 h at different temperatures. Hall effect and photo luminescence (PL) measurements were performed to investigate the electrical and optical properties of the films. PL measurements reveal that N ion implantation can deteriorate the photoluminescence. The subsequent annealing leads to the increase of the luminescence. Hall effect measurements indicate that the N-implanted ZnO film annealed at 600 degrees C is still n-type and carrier concentration is as high as 6.67 x 10(22) cm(-3). Lattice mismatch and the high doping levels are responsible for the difficulty in fabrication of p-type ZnO thin films by high dose N ion implantation. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：83 / 86
页数：4
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