Effect of laser annealing on photoluminescence properties of Phosphorus implanted ZnO nanorods

被引：14
|
作者：
Shimogaki, Tetsuya [1 ]
Okazaki, Kota [1 ]
Nakamura, Daisuke [1 ]
Higashihata, Mitsuhiro [1 ]
Asano, Tanemasa [1 ]
Okada, Tatsuo [1 ]
机构：
[1] Kyushu Univ, Dept Elect Engn, Nishi Ku, Fukuoka 8190395, Japan
来源：
OPTICS EXPRESS | 2012年 / 20卷 / 14期
基金：
日本科学技术振兴机构; 日本学术振兴会;
关键词：
DEPOSITION; NANOWIRES; ARRAYS; FILMS;
D O I：
10.1364/OE.20.015247
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The effect of the nanosecond laser annealing on the photoluminescence (PL) property of phosphorus ions (P+) implanted ZnOnanorods (NRs) has been investigated. The nanosecond laser annealing was performed with the third harmonic of a Q-switched Nd:YAG laser (355nm, 10ns/pulse) at a fluence of 100mJ/cm(2). It turned out that nanosecond laser annealing is more effective in the recovery of the PL property compared with the thermal annealing using an electric furnace. As the results, the I-V characteristics of the p-n homojunctions along ZnO NRs showed rectifying property with a threshold voltage of approximately 6V. (C)2012 Optical Society of America
引用
收藏
页码：15247 / 15252
页数：6
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