Photoluminescence and electrical properties of N-implanted ZnO films

被引：12

作者：

Zhang, X. D. ^{[1
]}

Liu, C. L. ^{[1
]}

Wang, Z. ^{[1
]}

Lu, Y. Y. ^{[1
]}

Yin, L. J. ^{[1
]}

机构：

[1] Tianjin Univ, Sch Sci, Dept Phys, Tianjin 300072, Peoples R China

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2007年 / 254卷 / 01期

关键词：

ZnO; ion implantation; photoluminescence; doping level;

D O I：

10.1016/j.nimb.2006.10.074

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

ZnO thin films deposited on glass substrate were implanted by 140 keV N ions at a dose of 2 x 10(16)/cm(2) and were then annealed in vacuum for 1 h at different temperatures. Hall effect and photo luminescence (PL) measurements were performed to investigate the electrical and optical properties of the films. PL measurements reveal that N ion implantation can deteriorate the photoluminescence. The subsequent annealing leads to the increase of the luminescence. Hall effect measurements indicate that the N-implanted ZnO film annealed at 600 degrees C is still n-type and carrier concentration is as high as 6.67 x 10(22) cm(-3). Lattice mismatch and the high doping levels are responsible for the difficulty in fabrication of p-type ZnO thin films by high dose N ion implantation. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：83 / 86

页数：4

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