Non-volatile aluminum oxide resistive memory devices on a wrapping paper substrate

We fabricated non-volatile resistive memory devices on a commercially available flexible paper substrate using physical vapor deposition methods in all of the fabrication steps. By using only evaporable component materials including aluminum oxide (Al2O3) and metal electrodes, it has become possible to constitute the vertical stacking Al2O3 active layer structure with metal electrodes in the memory devices without wet or crumpled damage on the paper substrate. The memory devices showed the typical unipolar switching characteristic with excellent electrical performances of low operating threshold voltage (similar to 3.2 V), high ON/OFF ratio (similar to 10(4)), good reproducibility (similar to 500 endurance cycles), and stability (similar to 10(4) s of retention times). The outstanding flexibility of the paper substrate has made it possible to stably maintain the electrical properties of the memory devices both in flat and bent configurations (radius of 5 and 1 mm) without any serious degradation.