Non-volatile Memory Devices Based on Chalcogenide Materials

被引：0
|
作者：
Wang, Fei [1 ]
Wu, Xiaolong [2 ]
机构：
[1] Calif State Univ Long Beach, Dept Elect Engn, Long Beach, CA 90840 USA
[2] Calif State Univ Long Beach, Dept Comp Engn & Comp Sci, Long Beach, CA 90840 USA
来源：
PROCEEDINGS OF THE 2009 SIXTH INTERNATIONAL CONFERENCE ON INFORMATION TECHNOLOGY: NEW GENERATIONS, VOLS 1-3 | 2009年
关键词：
Non-volatile memory; Devices; Chalcogenide glasses; Phase change; PHASE; GLASSES; TRANSITIONS;
D O I：
暂无
中图分类号：
TP18 [人工智能理论];
学科分类号：
081104 ; 0812 ; 0835 ; 1405 ;
摘要：
Chalcogenides based non-volatile memory is a promising pipe of non-volatile memory that display several advantages over the currently wide spread flash memory. This paper reviews the theory, fabrication and operation of two types of chalcogenide based nonvolatile memories, i.e. phase change memory (PCM) and programmable metallization cell (PMC).
引用
收藏
页码：5 / +
页数：3
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