A model for non-volatile electronic memory devices with strongly correlated materials

被引：8
|
作者：
Rozenberg, MJ [1 ]
Inoue, IH
Sánchez, MJ
机构：
[1] Univ Paris 11, Phys Solides Lab, CNRS, UMR 8502, F-91405 Orsay, France
[2] Univ Buenos Aires, FCEN, Dept Fis Juan Jose Giambiagi, RA-1428 Buenos Aires, DF, Argentina
[3] Natl Inst Adv Ind Sci & Technol AIST, CERC, Tsukuba, Ibaraki 3058562, Japan
[4] Ctr Atom Bariloche, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina
来源：
THIN SOLID FILMS | 2005年 / 486卷 / 1-2期
关键词：
resistance switching; non-volatile memory;
D O I：
10.1016/j.tsf.2004.10.059
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The behavior of a model for non-volatile electronic memory devices is discussed. The resistance switching mechanism that gives place to the memory effect is due to an effective doping driven transition in small domains at the interface. (c) 2004 Elsevier B.V All rights reserved.
引用
收藏
页码：24 / 27
页数：4
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