Effect of Ag Nanoparticles on Resistive Switching of Polyfluorene-Based Organic Non-Volatile Memory Devices

被引：3

作者：

Kim, Tae-Wook ^{[1
]}

Oh, Seung-Hwan ^{[1
]}

Choi, Hyejung ^{[1
]}

Wang, Gunuk ^{[1
]}

Kim, Dong-Yu ^{[1
]}

Hwang, Hyunsang ^{[1
]}

Lee, Takhee ^{[1
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2010年 / 56卷 / 01期

关键词：

Ag nanoparticles; Polyfluorene-derivatives; Organic non-volatile memory device; THIN-FILM; BISTABILITY; MECHANISM;

D O I：

10.3938/jkps.56.128

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The effects of Ag nanoparticles on the switching behavior of polyfluorene-based organic nonvolatile memory devices were investigated. Polyfluorene-derivatives (WPF-oxy-F) with and without Ag nanoparticles were synthesized, and the presence of Ag nanoparticles in Ag-WPF-oxy-F was identified by transmission electron microscopy and X-ray photoelectron spectroscopy analyses. The Ag-nanoparticles did not significantly affect the basic switching performances, such as the current-voltage characteristics, the distribution of on/off resistance, and the retention. The pulse switching time of Ag-WPF-oxy-F was faster than that of WPF-oxy-F. Ag-WPF-oxy-F memory devices showed an area dependence in the high resistance state, implying that formation of a Ag metallic channel for current conduction.

引用

页码：128 / 132

页数：5

共 50 条

[1] Effect of metal ions on the switching performance of polyfluorene-based organic non-volatile memory devices
Kim, Tae-Wook
Oh, Seung-Hwan
Lee, Joonmyoung
Choi, Hyejung
Wang, Gunuk
Park, Jubong
Kim, Dong-Yu
Hwang, Hyunsang
Lee, Takhee
[J]. ORGANIC ELECTRONICS, 2010, 11 (01) : 109 - 114
[2] Statistical characterization of the memory effect in polyfluorene based non-volatile resistive memory devices
Lei, Bao
Kwan, Wei Lek
Shao, Yue
Yang, Yang
[J]. ORGANIC ELECTRONICS, 2009, 10 (06) : 1048 - 1053
[3] Non-volatile memory concepts based on resistive switching
Waser, R.
[J]. 2007 SIXTEENTH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2, 2007, : 43 - 45
[4] Nonpolar resistive switching in Cu/SiC/Au non-volatile resistive memory devices
Zhong, L.
Jiang, L.
Huang, R.
de Groot, C. H.
[J]. APPLIED PHYSICS LETTERS, 2014, 104 (09)
[5] Bistable non-volatile resistive memory devices based on ZnO nanoparticles embedded in polyvinylpyrrolidone
Zhang, Hongyan
Zhao, Xiaofeng
Huang, Jiahe
Bai, Ju
Hou, Yanjun
Wang, Cheng
Wang, Shuhong
Bai, Xuduo
[J]. RSC ADVANCES, 2020, 10 (25) : 14662 - 14669
[6] Non-volatile resistive switching for advanced memory applications
Chen, A
Haddad, S
Wu, YC
Fang, TN
Lan, Z
Avanzino, S
Pangrle, S
Buynoski, M
Rathor, M
Cai, WD
Tripsas, N
Bill, C
VanBuskirk, M
Taguchi, M
[J]. IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST, 2005, : 765 - 768
[7] Resistive switching and noise in non-volatile organic memories
Vandamme, Lode K. J.
Colle, Michael
de Leeuw, Dago M.
Verbakel, Frank
[J]. NOISE AND FLUCTUATIONS IN CIRCUITS, DEVICES, AND MATERIALS, 2007, 6600
[8] Resistive non-volatile memory devices (Invited Paper)
Waser, Rainer
[J]. MICROELECTRONIC ENGINEERING, 2009, 86 (7-9) : 1925 - 1928
[9] Organic Non-volatile Memory Devices Based on a Ferroelectric Polymer
Kalbitz, R.
Fruebing, P.
Gerhard, R.
Taylor, D. M.
[J]. 2011 14TH INTERNATIONAL SYMPOSIUM ON ELECTRETS (ISE), 2011, : 207 - +
[10] Memory characteristics of anthracene-based polyimides in non-volatile resistive memory devices
Lee, Seung-Hyun
Park, Sechang
Choi, Ju-Young
Choi, Yun-Je
Ji, Hyung Woo
Joung, Hyeyoung
Kim, Dam-Bi
Yoon, Kang-Hoon
Ji, Gyumin
Choi, Daeho
Lee, Jaekang
Paeng, Ki-Jung
Yang, Jaesung
Cho, Soohaeng
Chung, Chan-Moon
[J]. MATERIALS ADVANCES, 2023, 4 (22): : 5706 - 5715

← 1 2 3 4 5 →