共 50 条
- [43] Determining the thermal generation rate of minority charge carriers at semiconductor-ultrathin oxide interfaces Instruments and Experimental Techniques, 2011, 54 : 823 - 827
- [46] On solving the cracked-beam problem by block method COMMUNICATIONS IN NUMERICAL METHODS IN ENGINEERING, 2008, 24 (11): : 1277 - 1289
- [47] SPACE-CHARGE REGION RELAXATION IN AN EXTRINSIC SEMICONDUCTOR, TAKING ACCOUNT OF RECAPTURE OF GENERATED CARRIERS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (07): : 778 - 780
- [48] SPACE CHARGE REGION RELAXATION IN AN EXTRINSIC SEMICONDUCTOR, TAKING ACCOUNT OF RECAPTURE OF GENERATED CARRIERS. Soviet physics. Semiconductors, 1984, 18 (07): : 778 - 780
- [50] Generation of minority charge carriers at the semiconductor surface during thermally activated ionic depolarization of metal-insulator-semiconductor structures Semiconductors, 2000, 34 : 277 - 283