Determining the thermal generation rate of minority charge carriers at semiconductor-ultrathin oxide interfaces

被引：0

作者：

E. I. Goldman

N. F. Kukharskaya

V. G. Naryshkina

G. V. Chucheva

机构：

[1] Russian Academy of Sciences,Institute of Radio Engineering and Electronics

[2] Fryazino Branch,undefined

来源：

Instruments and Experimental Techniques | 2011年 / 54卷

关键词：

Hole Pair; Tunneling Current; Capacitive Current; Minority Charge Carrier; Localize Electron State;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A simple proximate method for determining the generation rate Gs of electron-hole pairs in metal-ultrathin oxide-semiconductor (MOS) structures is proposed. This method is based on measurements of dynamic current-voltage characteristics of MOS structures in the region of deep depletion of the semiconductor surface and on the comparison of these data to a quasi-equilibrium volt-farad characteristic (VFC) of an ideal MOS structure. This approach to determining Gs from the value of the structure capacitance is insensitive either to a shift of the VPC, which is caused by the presence of built-in charges, or a recharge of localized electron states in the oxide and at the Si-SiO2 interface. The proposed technique also allows one to take the influence of a tunneling current through an insulator on the measurement results into account. The algorithm was tested in studies of generation and annihilation processes of centers of generation of electron-hole pairs in n-Si-based MOS structures with an ultrathin (≅4 nm) oxide.

引用

页码：823 / 827

页数：4

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