Multi-level resistive switching in HfO2/Al2O3/HfO2 based memristor on transparent ITO electrode

被引：0
|
作者：
Mahata, Chandreswar [1 ]
Kim, Sungjun [1 ]
机构：
[1] Chungbuk Natl Univ, Sch Elect Engn, Cheongju 28644, South Korea
来源：
2020 INTERNATIONAL CONFERENCE ON ELECTRONICS, INFORMATION, AND COMMUNICATION (ICEIC) | 2020年
基金：
新加坡国家研究基金会;
关键词：
RRAM; trilayered dielectric film; ITO; miltilevel resistance;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
RRAM with multilevel resistance states of HfO2/Al2O3/HfO2 based memristor on transparent ITO electrode is presented. Trilayer structure proves to be promising for multilevel memory state under DC voltage condition. Under different SET current compliance and RESET voltage the memristor device shows reliable multi-level resistive switching characteristics.
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页数：3
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