Investigation of the Interface Oxide of Al2O3/HfO2 and HfO2/Al2O3 stacks on GaAs (100) surfaces

被引：0
|
作者：
Cho, Young Dae [1 ]
Suh, Dong Chan [1 ]
Lee, Yongshik [2 ]
Ko, Dae-Hong [1 ]
Chung, Kwun Bum [3 ]
Cho, Mann-Ho [4 ]
机构：
[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea
[2] Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea
[3] Dankook Univ, Dept Phys, Cheonan 330714, South Korea
[4] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea
来源：
ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 6: NEW MATERIALS, PROCESSES, AND EQUIPMENT | 2010年 / 28卷 / 01期
关键词：
ATOMIC-LAYER-DEPOSITION; GATE DIELECTRICS; HFO2;
D O I：
10.1149/1.3375616
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The physical and the electrical properties of ALD Al2O3 / HfO2 and HfO2 / Al2O3 stacks on GaAs systems before after heat treatment are investigated. Results reveal that the addition of Al2O3 layers suppresses not only the poly-crystallization of HfO2 even after heat treatment, but also the formation of interfacial oxide. High-resolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS) analysis results are presented.
引用
收藏
页码：311 / 314
页数：4
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