Control of fine-structure splitting and excitonic binding energies in selected individual InAs/GaAs quantum dots

被引：55

作者：

Seguin, R. ^{[1
]}

Schliwa, A.

Germann, T. D.

Rodt, S.

Poetschke, K.

Strittmatter, A.

Pohl, U. W.

Bimberg, D.

Winkelnkemper, M.

Hammerschmidt, T.

Kratzer, P.

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany

[3] Univ Duisburg Essen, Fachbereich Phys, D-47048 Duisburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 26期

关键词：

D O I：

10.1063/1.2424446

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. Single QD cathodoluminescence spectra are recorded to trace the evolution of one and the same QD over several steps of annealing. A substantial reduction of the excitonic fine-structure splitting upon annealing is observed. In addition, the binding energies of different excitonic complexes change dramatically. The results are compared to model calculations within 8-band k center dot p theory and the configuration interaction method, suggesting a change of electron and hole wave function shape and relative position. (c) 2006 American Institute of Physics.

引用

页数：3

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