Exciton fine-structure splitting in GaN/AlN quantum dots

被引：55

作者：

Kindel, C. ^{[1
,2
]}

Kako, S. ^{[3
]}

Kawano, T. ^{[1
]}

Oishi, H. ^{[1
]}

Arakawa, Y. ^{[1
,3
,4
]}

Hoenig, G. ^{[2
]}

Winkelnkemper, M. ^{[2
]}

Schliwa, A. ^{[2
]}

Hoffmann, A. ^{[2
]}

Bimberg, D. ^{[2
]}

机构：

[1] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538904, Japan

[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[3] Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan

[4] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

来源：

PHYSICAL REVIEW B | 2010年 / 81卷 / 24期

关键词：

DRIVEN;

D O I：

10.1103/PhysRevB.81.241309

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Exciton bright-state fine-structure splitting (FSS) in single GaN/AlN quantum dots (QDs) is reported, presenting an important step toward the realization of room temperature single-qubit emitters for quantum cryptography and communication. The FSS in nitride QDs is up to 7 meV and thus much larger than for other QD systems. We find also a surprising dependence of FSS on the QD size, inverse to that of arsenide QDs. Now we are able to explain why FSS can only be observed in small QDs of high-emission energies. Our calculations reveal a shape/strain anisotropy as origin of the large FSS allowing different approaches to control FSS in nitrides.

引用

页数：4

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