Tuning exciton energy and fine-structure splitting in single InAs quantum dots by applying uniaxial stress

被引：5

作者：

Su, Dan ^{[1
]}

Dou, Xiuming ^{[1
]}

Wu, Xuefei ^{[1
]}

Liao, Yongping ^{[1
]}

Zhou, Pengyu ^{[1
]}

Ding, Kun ^{[1
]}

Ni, Haiqiao ^{[1
]}

Niu, Zhichuan ^{[1
]}

Zhu, Haijun ^{[1
]}

Jiang, Desheng ^{[1
]}

Sun, Baoquan ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

来源：

AIP ADVANCES | 2016年 / 6卷 / 04期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.4946850

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Exciton and biexciton emission energies as well as excitonic fine-structure splitting (FSS) in single InAs/GaAs quantum dots (QDs) have been continuously tuned in situ in an optical cryostat using a developed uniaxial stress device. With increasing tensile stress, the red shift of excitonic emission is up to 5 nm; FSS decreases firstly and then increases monotonically, reaching a minimum value of approximately 10 mu eV; biexciton binding energy decreases from 460 to 106 mu eV. This technique provides a simple and convenient means to tune QD structural symmetry, exciton energy and biexciton binding energy and can be used for generating entangled and indistinguishable photons. (C) 2016 Author(s).

引用

页数：5

共 50 条

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