Temperature dependence of analogue/RF performance, linearity and harmonic distortion for dual-material gate-oxide-stack double-gate TFET

This article presents an investigation report of the effects of temperature variation in the range of 300 to 480 K on electrical performance parameters of conventional dual-material double-gate tunnel field effect transistor (DMDG-TFET) and dual-material gate-oxide-stack double-gate tunnel field effect transistor (DMGOSDG-TFET). This report shows an analysis and comparison of the impacts of operating temperature variation on both the devices in terms of DC, analogue/RF, linearity and harmonic distortion parameters with the help of simulation results obtained using a numerical device simulator. It could be stated that DMGOSDG-TFET is more insensitive with respect to temperature variation in terms of DC, analogue/RF and linearity performances as compared to conventional DMDG-TFET. Moreover, in terms of harmonic distortion characteristics DMGOSDG-TFET is found to be more stable with temperature variation as compared to DMDG-TFET.