Nonequilibrium Green's function treatment of a new nanoscale dual-material double-gate MOSFET

In this paper the electrical characteristics of a novel nanoscale double-gate (DG) silicon-on-insulator (SOI) MOSFET, in which the front gate consists of two materials with different work functions, have been investigated by a full quantum-mechanical simulation. The simulations have been done by the self-consistent solution of 2D Poisson-Schrodinger equations, within the nonequilibrium Green's function (NEGF) formalism. The quantum simulation results show that the new structure decreases significantly the leakage current and drain conductance and increases the on-off current ratio and voltage gain as compared to the conventional DG SOI MOSFET. In this new structure, the potential in the channel region exhibits a step function that ensures the screening of the drain potential variation by the gate near the drain, resulting in suppressed short-channel effects like the drain-induced barrier lowering (DIBL) and hot-carrier effect. (C) 2011 Elsevier B.V. All rights reserved.