A new two-dimensional subthreshold behavior model for the short-channel asymmetrical dual-material double-gate (ADMDG) MOSFET's

被引：13

作者：

Chiang, Te-Kuang ^{[1
]}

机构：

[1] Natl Univ Kaohsiung, Dept Elect Engn, Kaohsiung, Taiwan

来源：

MICROELECTRONICS RELIABILITY | 2009年 / 49卷 / 07期

关键词：

FIELD-EFFECT TRANSISTORS; VOLTAGE;

D O I：

10.1016/j.microrel.2009.05.006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Based on the exact solution of two-dimensional Poisson's equation, a novel subthreshold behavior model comprising channel potential, subthreshold swing, and threshold voltage for the short-channel asymmetrical dual-material double-gate (ADMDG) MOSFETs have been developed. The model is verified by its simulation results that agree well with those of the two-dimensional numerical simulator. Besides offering the physical insight into device physics, the model provides the basic designing guidance for the ADMDG MOSFET's. (C) 2009 Elsevier Ltd. All rights reserved.

引用

页码：693 / 698

页数：6

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