Vertical Tunneling Based Dual-material Double-gate TFET

To enhance current driving capability, switching ratio and subthreshold swing, a novel device structure vertical tunneling based dual-material double-gate tunnel field-effect transistor (VTDMDG-TFET) is designed in presented work. The device optimization of proposed device in terms of work-function engineering, gate oxide material, gate length, output characteristics and Si-thickness is done by the authors. Moreover, dual-gate approach is used in this work for enhancement in ON-state current of VTDMDG-TFET. Further, gate terminal of VTDMDG-TFET is comprised of two metal gates, namely auxiliary gate and tunnel gate. Use of dual-material at gate terminal makes the presented device structure adequate in terms of high ON-current, optimized subthreshold-swing as well as high switching ratio. To get the better electrostatic control of the gate higher dielectric constant material H fO(2) is used as the gate dielectric material oxide, which enhances the ON-current of the presented structure. VTDMDG-TFET is also found better in terms of improved transconductance. The improved transconductance of the device makes VTDMDG-TFET a better choice for analog/RF and linearity performances. This leads to the TFET applications in the field of energy harvesting, biosensing, ultra-low power RF circuits.