Integrated High Voltage Active Quenching Circuit in 150nm CMOS Technology

被引：0
|
作者：
Jungwirth, Martin [1 ]
Dervic, Alija [1 ]
Zimmermann, Horst [1 ]
机构：
[1] TU Wien, Inst Electrodynam Microwave & Circuit Engn, Vienna, Austria
来源：
2020 AUSTROCHIP WORKSHOP ON MICROELECTRONICS (AUSTROCHIP) | 2020年
基金：
奥地利科学基金会;
关键词：
SPAD; CMOS; high voltage; active quenching circuit; AQC; quenching circuit;
D O I：
10.1109/austrochip51129.2020.9232988
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
An integrated high voltage active quenching circuit (AQC) in a 150 nm high voltage CMOS technology is presented. The circuit is designed for off-chip single-photon avalanche diodes (SPAD) with parasitic capacitance up to 5 pF. With the high voltage lateral double-diffused MOSFETs (LDMOS) the circuit is able to apply excess bias voltages up to 35 V. The excess bias voltage for the SPAD is adjustable from 5 V up to 35 V and retains a constant quenching time of 2.2 ns at a SPAD capacitance of 5 pF.
引用
收藏
页码：53 / 56
页数：4
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