Cascode MOSFET-MESFET RF Power Amplifier on 150nm SOI CMOS Technology

被引：0

作者：

Ghajar, M. Reza ^{[1
]}

Lepkowski, William ^{[1
,2
]}

Wilk, Seth ^{[1
,2
]}

Bakkaloglu, Bertan ^{[1
]}

Boumaiza, Slim ^{[3
]}

Thornton, Trevor ^{[1
,2
]}

机构：

[1] Arizona State Univ, Tempe, AZ 85287 USA

[2] SJT Micropower Inc, Fountain Hills, AZ 85268 USA

[3] Univ Waterloo, Waterloo, ON N2L 3G1, Canada

来源：

2011 6TH EUROPEAN MICROWAVE INTEGRATED CIRCUIT CONFERENCE | 2011年

关键词：

MESFETs; silicon-on-insulator (SOI); Power Amplifiers (PA);

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metal-semiconductor-field-effect-transistors (MESFETs) have been fabricated using a 150 nm partially depleted silicon-on-insulator CMOS technology. A peak f(T) of 40 GHz and peak breakdown voltages of up to 12V were measured. Comparatively, the CMOS transistors on the same process have a maximum steady-state voltage limit of 1.95V. TOM3 model for MESFET developed in ADS. The demonstrated high cut-off frequency and high voltage operation capability make the SOI MESFET a good device candidate for integrated radio frequency (RF) power amplifiers (PA). A cascoded MOS-MES RF PA architecture is proposed and simulated in ADS using the TOM3 model. Simulation results show 75% PAE while delivering 24dBm output power.

引用

页码：316 / 319

页数：4

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