Anti-Stokes photoluminescence and phonon broadening in self-assembled InAs/GaAs quantum dots

被引：0
|
作者：
Kammerer, C
Cassabois, G
Voisin, C
Delalande, C
Roussignol, P
Gérard, JM
机构：
[1] Ecole Normale Super, Phys Mat Condensee Lab, F-75231 Paris 05, France
[2] France Telecom, R&D, F-92220 Bagneux, France
来源：
COMPOUND SEMICONDUCTORS 2001 | 2002年 / 170期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Photoluminescence up-conversion has been observed by means of micro-photoluminescence spectroscopy with cw-excitation in single InAs/GaAs self-assembled quantum dots (QDs). Excitation spectroscopy of the up-converted signal allows to assign the background gradually increasing up to the wetting layer (WL) absorption band edge usually observed in photoluminescence excitation spectroscopy (PLE) to a band-tail related to the WL quantum well. The spectral widths of QDs' excited states have also been studied by means of micro-PLE. A strong correlation is found between the background level and the phonon-induced spectral broadening.
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页码：507 / 512
页数：6
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