Self-assembled InAs quantum dots in an InGaAsN matrix on GaAs

Self-assembled InAs quantum dots (QDs) are fabricated in In0.03Ga0.97As0.99N0.01 and In0.06Ga0.94As0.98N0.02 matrices on GaAs by solid source molecular beam epitaxy The influence of InAs average layer thickness and matrix material on photoluminescence properties are studied. We observe a photoluminescence peak wavelength up to 1.49 mum from structures with a nominal InAs thickness of four monolayers (ML). For QD structures emitting at 1.3 mum, no saturation of ground state luminescence and no excited state photoluminescence are detected. This should lead to an improved performance of 1.3 mum quantum dot lasers an GaAs.