Anomalous photocurrent self-assembled InAs/GaAs quantum dots

被引：4

作者：

Monte, A. F. G. ^{[1
]}

Qu, Fanyao

Hopkinson, M.

机构：

[1] Univ Fed Uberlandia, Inst Fis, BR-38400902 Uberlandia, MG, Brazil

[2] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 18期

关键词：

D O I：

10.1063/1.2920763

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carrier dynamics in self-assembled InAs/GaAs quantum dots (QDs) is studied by photoluminescence (PL) and its complementary photocurrent (PC) spectroscopy. We found that carrier capture from the GaAs barriers, radiative recombination in InAs quantum dots, and tunneling among vertical QDs are very sensitive to applied bias voltage. An unusual behavior, by which the PL intensity presents steplike bias voltage dependence, has been observed. It is also consistently manifested in bias voltage dependent PC signals. We attribute this anomalous behavior to the interplay between the coupling of lateral QDs and tunneling among vertical ones. (c) 2008 American Institute of Physics.

引用

页数：3

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