Temperature dependence of the Hall mobility of n-type 3C-SiC

被引：3

作者：

Weng, XM

Cui, HL

机构：

[1] Dept. of Phys. and Eng. Physics, Stevens Institute of Technology, Hoboken

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1997年 / 9卷 / 33期

关键词：

D O I：

10.1088/0953-8984/9/33/011

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The Hall mobility of n-type 3C-SiC has been calculated employing a set of hydrodynamic balance equations. The acoustic, polar optical, piezoelectric, and intervalley optical lattice scattering, as well as the ionized and neutral impurity scattering are considered in the transport study. The calculated Hall mobility is in good agreement with the experimental data from 70 K to 1000 K. The Hall factor is shown to be less than unity, due to the nonparabolicity of the energy bands.

引用

页码：7089 / 7094

页数：6

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