Temperature dependence of the Hall mobility of n-type 3C-SiC

被引：3

作者：

Weng, XM

Cui, HL

机构：

[1] Dept. of Phys. and Eng. Physics, Stevens Institute of Technology, Hoboken

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1997年 / 9卷 / 33期

关键词：

D O I：

10.1088/0953-8984/9/33/011

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The Hall mobility of n-type 3C-SiC has been calculated employing a set of hydrodynamic balance equations. The acoustic, polar optical, piezoelectric, and intervalley optical lattice scattering, as well as the ionized and neutral impurity scattering are considered in the transport study. The calculated Hall mobility is in good agreement with the experimental data from 70 K to 1000 K. The Hall factor is shown to be less than unity, due to the nonparabolicity of the energy bands.

引用

页码：7089 / 7094

页数：6

共 50 条

[21] Determination of the conduction band discontinuity in an n-type 3C-SiC/6H-SiC heterojunction.
Smith, SR
Evwaraye, AO
Steckl, AJ
Yuan, C
Mitchel, WC
Roth, MD
SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 317 - 319
[22] HALL EFFECT AND MOBILITY IN N-TYPE GAAS
HUTH, F
PHYSICA STATUS SOLIDI, 1968, 29 (01): : K35 - &
[23] Comparative study of thermally grown oxides on n-type free standing 3C-SiC (001)
Esteve, R.
Schoner, A.
Reshanov, S. A.
Zetterling, C. -M.
Nagasawa, H.
JOURNAL OF APPLIED PHYSICS, 2009, 106 (04)
[24] Spin transport in n-type 3C-SiC observed in a lateral spin-pumping device
Shigematsu, Ei
Ohshima, Ryo
Ando, Yuichiro
Shinjo, Teruya
Kimoto, Tsunenobu
Shiraishi, Masashi
SOLID STATE COMMUNICATIONS, 2020, 305 (305)
[25] Fabrication of n-type nanocrystalline diamond/3C-SiC/p-Si(001) junctions
Goto, Masaki
Koga, Akira
Yamada, Kazuhiro
Kato, Yoshimine
Teii, Kungen
SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, 679-680 : 524 - +
[26] Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon
Spera, M.
Greco, G.
Lo Nigro, R.
Bongiorno, C.
Giannazzo, F.
Zielinski, M.
La Via, F.
Roccaforte, F.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2019, 93 : 295 - 298
[27] ROOM TEMPERATURE HIGH-FIELD HALL MOBILITY IN N-TYPE SILICON
BASU, PK
NAG, BR
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1969, 2 (12): : 2396 - &
[28] Hall effect in the channel of 3C-SiC MOSFETs
Krieger, M
Pensl, G
Bakowski, M
Schöner, A
Nagasawa, H
Abe, M
SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 441 - 444
[29] High Temperature Performance of 3C-SiC MOSFETs with High Channel Mobility
Uchida, Hidetsugu
Minami, Akiyuki
Sakata, Toyokazu
Nagasawa, Hiroyuki
Kobayashi, Motoki
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 1109 - 1112
[30] Donor and acceptor concentration dependence of the electron Hall mobility and the Hall scattering factor in n-type 4H-and 6H-SiC
Iwata, H
Itoh, KM
JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) : 6228 - 6234

← 1 2 3 4 5 →