Temperature dependence of the Hall mobility of n-type 3C-SiC

被引：3
|
作者：
Weng, XM
Cui, HL
机构：
[1] Dept. of Phys. and Eng. Physics, Stevens Institute of Technology, Hoboken
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 1997年 / 9卷 / 33期
关键词：
D O I：
10.1088/0953-8984/9/33/011
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The Hall mobility of n-type 3C-SiC has been calculated employing a set of hydrodynamic balance equations. The acoustic, polar optical, piezoelectric, and intervalley optical lattice scattering, as well as the ionized and neutral impurity scattering are considered in the transport study. The calculated Hall mobility is in good agreement with the experimental data from 70 K to 1000 K. The Hall factor is shown to be less than unity, due to the nonparabolicity of the energy bands.
引用
收藏
页码：7089 / 7094
页数：6
相关论文
共 50 条
  • [11] Highly sensitive piezoresistance behaviors of n-type 3C-SiC nanowires
    Bi, Jinghui
    Wei, Guodong
    Wang, Lin
    Gao, Fengmei
    Zheng, Jinju
    Tang, Bin
    Yang, Weiyou
    JOURNAL OF MATERIALS CHEMISTRY C, 2013, 1 (30) : 4514 - 4517
  • [12] Persistent Conductivity in n-type 3C-SiC Observed at Low Temperatures
    Beljakowa, S.
    Hauck, M.
    Bockstedte, M.
    Fromm, F.
    Hundhausen, M.
    Nagasawa, H.
    Weber, H. B.
    Pensl, G.
    Krieger, M.
    SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 265 - +
  • [13] High Quality Ohmic Contacts on n-type 3C-SiC Obtained by High and Low Process Temperature
    Bazin, A. E.
    Michaud, J. F.
    Cayrel, F.
    Portail, M.
    Chassagne, T.
    Zielinski, M.
    Collard, E.
    Alquier, D.
    2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES, 2010, 1292 : 51 - +
  • [14] Piezoresistive properties of single crystalline, polycrystalline, and nanocrystalline n-type 3C-SiC
    Eickhoff, M
    Möller, M
    Kroetz, G
    Stutzmann, M
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (05) : 2872 - 2877
  • [15] Structural and electrical characterizations of n-type implanted layers and ohmic contacts on 3C-SiC
    Song, X.
    Biscarrat, J.
    Michaud, J. -F.
    Cayrel, F.
    Zielinski, M.
    Chassagne, T.
    Portail, M.
    Collard, E.
    Alquier, D.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2011, 269 (18): : 2020 - 2025
  • [16] Ti thickness influence for Ti/Ni ohmic contacts on n-type 3C-SiC
    Biscarrat, J.
    Song, X.
    Michaud, J. F.
    Cayrel, F.
    Portail, M.
    Zielinski, M.
    Chassagne, T.
    Collard, E.
    Alquier, D.
    HETEROSIC & WASMPE 2011, 2012, 711 : 179 - +
  • [17] Electron Paramagnetic Resonance study on n-type electron-irradiated 3C-SiC
    Carlsson, P.
    Rabia, K.
    Son, N. T.
    Ohshima, T.
    Morishita, N.
    Itoh, H.
    Isoya, J.
    Janzen, E.
    PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY, 2008, 100
  • [18] Nanowire-density-dependent field emission of n-type 3C-SiC nanoarrays
    Wang, Lin
    Gao, Fengmei
    Chen, Shanliang
    Li, Chengming
    Yang, Weiyou
    APPLIED PHYSICS LETTERS, 2015, 107 (12)
  • [19] Piezo-Hall effect and fundamental piezo-Hall coefficients of single crystal n-type 3C-SiC(100) with low carrier concentration
    Qamar, Afzaal
    Dao, Dzung Viet
    Dinh, Toan
    Iacopi, Alan
    Walker, Glenn
    Phan, Hoang-Phuong
    Hold, Leonie
    Dimitrijev, Sima
    APPLIED PHYSICS LETTERS, 2017, 110 (16)
  • [20] Dependence of the Channel Mobility in 3C-SiC n-MOSFETs on the Crystal Orientation and Channel Length
    Zippelius, Bernd
    Hauck, Martin
    Beljakowa, Svetlana
    Weber, Heiko B.
    Krieger, Michael
    Nagasawa, Hiroyuki
    Uchida, Hidetsugu
    Pensl, Gerhard
    Schoner, Adolf
    SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 1113 - +
12345