High temperature polycrystalline diamond metal-insulator-semiconductor field-effect-transistor

被引：16

作者：

Pang, LYS ^{[1
]}

Chan, SSM ^{[1
]}

Johnston, C ^{[1
]}

Chalker, PR ^{[1
]}

Jackman, RB ^{[1
]}

机构：

[1] AEA TECHNOL,HARWELL LAB B552,DIDCOT OX11 0RA,OXON,ENGLAND

来源：

关键词：

diamond; device; electrical properties; ion implantation;

D O I：

10.1016/S0925-9635(96)00756-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High temperature p-type depletion-mode metal-insulator-semiconductor field-effect-transistors with intrinsic diamond gates have been fabricated from thin film polycrystalline diamond. They have been successfully operated at 300 degrees C with low leakage currents, and exhibit complete channel current pinch-off and modulation. A transconductance of 174 mu S mm(-1) has been measured, the highest reported value to date for this type of device. (C) 1997 Elsevier Science S.A.

引用

页码：333 / 338

页数：6

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