Temperature dependence of DC characteristics in AlN/GaN metal insulator semiconductor field effect transistor

被引：0
|
作者：
Ide, T
Shimizu, M
Suzuki, A
Shen, XQ
Okumura, H
Nemoto, T
机构：
[1] Meiji Univ, Grad Sch, Dept Sci & Technol, Tama Ku, Kawasaki, Kanagawa 2148571, Japan
[2] Natl Inst Adv Ind Sci & Technol, Power Elect Res Ctr, Tsukuba, Ibaraki 3058568, Japan
[3] Tokai Univ, Grad Sch Engn, Hiratsuka, Kanagawa 2591292, Japan
来源：
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷
关键词：
AlN/GaN; metal insulator semiconductor field effect transistor; temperature dependence;
D O I：
10.4028/www.scientific.net/MSF.389-393.1519
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We fabricated AlN/GaN metal insulator semiconductor field effect transistor (MISFET) and measured the DC characteristics of the MISFET when the device temperature was varied from room temperature to 500 degreesC. We systematically investigated the temperature dependence of the DC characteristics in the MISFET. It was found that the degradation of our device characteristics at high temperature is mainly caused by the increase of the gate leakage current due to the low barrier height at the gate Schottky barrier.
引用
收藏
页码：1519 / 1522
页数：4
相关论文
共 50 条
  • [1] AlN/AlGaN/GaN metal insulator semiconductor heterostructure field effect transistor
    Cho, DH
    Shimizu, M
    Ide, T
    Ookita, H
    Okumura, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (7A): : 4481 - 4483
  • [2] AlN/GaN metal insulator semiconductor field effect transistor on Sapphire substrate
    Seo, Sanghyun
    Ghose, Kaustav
    Zhao, Guang Yuan
    Pavlidis, Dimitris
    [J]. IEICE TRANSACTIONS ON ELECTRONICS, 2008, E91C (07): : 994 - 1000
  • [3] The dc characteristics of a silicon-on-insulator metal-semiconductor field effect transistor
    Chattopadhyay, P
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (09) : 1036 - 1041
  • [4] AlN/GaN metal insulator semiconductor field effect transistor using wet chemical etching with hot phosphoric acid
    Ide, T
    Shimizu, M
    Suzuki, A
    Shen, XQ
    Okumura, H
    Nemoto, T
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2001, 188 (01): : 351 - 354
  • [5] DC and RF characteristics of AlN/GaN doped channel heterostructure field effect transistor
    Daumiller, I
    Schmid, P
    Kohn, E
    Kirchner, C
    Kamp, M
    Ebeling, KJ
    Pond, LL
    Weitzel, C
    [J]. ELECTRONICS LETTERS, 1999, 35 (18) : 1588 - 1590
  • [6] AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor with an in-situ AlN cap layer
    Lee, K. H.
    Chang, P. C.
    Chang, S. J.
    [J]. APPLIED PHYSICS LETTERS, 2011, 99 (15)
  • [7] Advantages of AlN/GaN metal insulator semiconductor field effect transistor using wet chemical etching with hot phosphoric acid
    Ide, Toshihide
    Shimizu, Mitsuaki
    Suzuki, Akira
    Shen, Xu-Qiang
    Okumura, Hajime
    Nemoto, Toshio
    [J]. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2001, 40 (08): : 4785 - 4788
  • [8] Advantages of AlN/GaN metal insulator semiconductor field effect transistor using wet chemical etching with hot phosphoric acid
    Ide, T
    Shimizu, M
    Suzuki, A
    Shen, XQ
    Okumura, H
    Nemoto, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (08): : 4785 - 4788
  • [9] DC and RF characteristics of AlN/GaN doped channel heterostructure field effect transistor
    Dept. of Electron Devices and Circt., University of Ulm, 89069 Ulm, Germany
    不详
    不详
    [J]. Electron. Lett., 18 (1588-1590):
  • [10] Fabrication of enhancement mode GaN metal-insulator semiconductor field effect transistor
    Chen, Peng
    Zhang, Rong
    Zhou, Yugang
    Luo, Zhiyun
    Xie, Shiyong
    Chen, Zhizhong
    Li, Weiping
    Zheng, Youdou
    [J]. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2000, 21 (03): : 215 - 218
12345