High temperature polycrystalline diamond metal-insulator-semiconductor field-effect-transistor

被引：16
|
作者：
Pang, LYS [1 ]
Chan, SSM [1 ]
Johnston, C [1 ]
Chalker, PR [1 ]
Jackman, RB [1 ]
机构：
[1] AEA TECHNOL,HARWELL LAB B552,DIDCOT OX11 0RA,OXON,ENGLAND
来源：
DIAMOND AND RELATED MATERIALS | 1997年 / 6卷 / 2-4期
关键词：
diamond; device; electrical properties; ion implantation;
D O I：
10.1016/S0925-9635(96)00756-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
High temperature p-type depletion-mode metal-insulator-semiconductor field-effect-transistors with intrinsic diamond gates have been fabricated from thin film polycrystalline diamond. They have been successfully operated at 300 degrees C with low leakage currents, and exhibit complete channel current pinch-off and modulation. A transconductance of 174 mu S mm(-1) has been measured, the highest reported value to date for this type of device. (C) 1997 Elsevier Science S.A.
引用
收藏
页码：333 / 338
页数：6
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