Investigation of Phase Transformation in HfO2 Ferroelectric Capacitor by Means of a ZrO2 Capping Layer

被引：26

作者：

Liu, Kuan-Wei ^{[1
]}

Chen, Hsuan-Han ^{[2
]}

Huang, Zhong-Ying ^{[3
]}

Wang, Wei-Chun ^{[1
]}

Fan, Yu-Chi ^{[3
]}

Lin, Ching-Liang ^{[4
]}

Hsu, Chih-Chieh ^{[3
]}

Fan, Chia-Chi ^{[3
]}

Hsu, Hsiao-Hsuan ^{[4
]}

Chang, Chun-Yen ^{[3
]}

Lin, Chien-Chung ^{[1
]}

Cheng, Chun-Hu ^{[5
]}

机构：

[1] Natl Chiao Tung Univ, Coll Photon, Dept Inst Photon Syst, Taipei, Taiwan

[2] Natl Chiao Tung Univ, Dept Electrophys, Taipei, Taiwan

[3] Natl Chiao Tung Univ, Dept Elect Engn, Taipei, Taiwan

[4] Natl Taipei Univ Technol, Dept Mat & Mineral Resources Engn, Taipei, Taiwan

[5] Natl Taiwan Normal Univ, Dept Mechatron Engn, Taipei, Taiwan

来源：

2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2019年

关键词：

ferroelectricity; hafnium oxide; zirconium oxide; phase transition;

D O I：

10.1109/edssc.2019.8754036

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper, the ferroelectric polarization effect of ZrO2 capping layer on HfO2 NUM capacitor was investigated. Based on crystallinity analysis, the phase transformation from monoclinic to orthorhombic phase in HfO2 film can be induced by a thin ZrO2 capping layer. The thickness of ZrO2 capping layer plays an important role in the ferroelectric polarization of HfO2 MFM capacitor. Compared to mixed HfZrO film, the stacked ZrO2/HfO2 film shows the advantage for suppressing the leakage issue during high-temperature ferroelectric phase transition.

引用

页数：3

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