Investigation of HfO2/ZrO2 Superlattice Dielectric and High-k AlON Interfacial Layer on Ferroelectric FinFET

被引：2
|
作者：
Huang, Ming-Yueh [1 ]
Yan, Siao-Cheng [1 ]
Zhong, Xin-Chan [1 ]
Chang, Chih-Siang [1 ]
Sun, Chong-Jhe [1 ]
Chen, Bo-An [1 ]
Lin, Yi-Wen [1 ]
Wu, Yung-Chun [1 ]
机构：
[1] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu, Taiwan
来源：
2023 SILICON NANOELECTRONICS WORKSHOP, SNW | 2023年
关键词：
D O I：
10.23919/SNW57900.2023.10183920
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
In this study, we fabricated 12 nmthick Hf0.5Zr0.5O2 (HZO)/HfO2-ZrO2 superlattice (SL-HZO) ferroelectric FinFET (Fe-FinFET) with SiO2/AlON interfacial layers (IL) for comparison. Compared to conventional HZO, SL-HZO FeFinFET shows a larger memory window (MW). Meanwhile, the AlON-based device owns lower operation voltage due to a more significant voltage drop across the FE layer. Overall, SL-HZO FeFinFET with AlON IL unleashes the potential of FeFET memory, enabling both low power consumption and a large MW.
引用
收藏
页码：125 / 126
页数：2
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