High-k, Higher-k and Ferroelectric HfO2

被引：4
|
作者：
Toriumi, Akira [1 ]
机构：
[1] Univ Tokyo, Dept Mat Engn, Tokyo 1138656, Japan
来源：
SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR | 2017年 / 80卷 / 01期
关键词：
V-TH; ORIGIN; SHIFT;
D O I：
10.1149/08001.0029ecst
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We would like to look back on our way, and discuss the origin of versatile properties of HfO2. The dielectric constant is important in high-k technology, and ferroelectric HfO2 recently reported is also exciting for functional device applications. Why does HfO2 show such various properties? We would like to understand HfO2 in more detail.
引用
收藏
页码：29 / 40
页数：12
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